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检索条件"主题词=Random access memory"
7533 条 记 录,以下是1-10 订阅
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16K CMOS/SOS asynchronous static RAM
IEEE Journal of Solid-State Circuits
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IEEE Journal of Solid-State Circuits 1979年 第5期14卷 867-872页
作者: A.G.F. Dingwall R.G. Stewart RCA Solid State Technology Center Somerville NJ 08876 United States
A new CMOS/SOS `buried-contact' process allows fabrication of dense static memory cells. The technology is applied in a 16K RAM with 1150 /spl mu/m/SUP 2/ (1.78 mil/SUP 2/) cells based on 5 /spl mu/m design rules.
来源: IEEE期刊 IEEE期刊 评论
NSM Jukebox to add DVD-RAM drives to CD library products
EMedia Professional
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EMedia Professional 第8期11卷 25页
Reports on NSM Jukebox's plan to integrated digital versatile disc (DVD)-Random access memory (RAM) into its line of compact disc (CD) libraries. Features of the CD libraries; Costs.
来源: EBSCOBSC期刊 EBSCOBSC期刊 评论
A 31 ns Random Cycle VCAT-Based 4F formulatype="inline"> Notation="TeX">$^ $ DRAM With Manufacturability and Enhanced Cell Efficiency
IEEE Journal of Solid-State Circuits
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IEEE Journal of Solid-State Circuits 2010年 第4期45卷 880-888页
作者: Ki-Whan Song Jin-Young Kim Jae-Man Yoon Sua Kim Huijung Kim Hyun-Woo Chung Hyungi Kim Kanguk Kim Hwan-Wook Park Hyun Chul Kang Nam-Kyun Tak Dukha Park Woo-Seop Kim Yeong-Taek Lee Yong Chul Oh Gyo-Young Jin Jeihwan Yoo Donggun Park Kyungseok Oh Changhyun Kim Young-Hyun Jun DRAM Development Group Memory Division Samsung Electronics Co. Hwasung-City Korea DRAM Development Group Memory Division Samsung Electronics Co. Hwasung-City Korea DRAM Core Technology Lab. R&D Center Samsung Electronics Co. Hwasung-City Korea DRAM Core Technology Lab. R&D Center Samsung Electronics Co. Hwasung-City Korea DRAM Core Technology Lab. R&D Center Samsung Electronics Co. Hwasung-City Korea DRAM Core Technology Lab. R&D Center Samsung Electronics Co. Hwasung-City Korea DRAM Development Group Memory Division Samsung Electronics Co. Hwasung-City Korea DRAM Development Group Memory Division Samsung Electronics Co. Hwasung-City Korea DRAM Development Group Memory Division Samsung Electronics Co. Hwasung-City Korea DRAM Development Group Memory Division Samsung Electronics Co. Hwasung-City Korea DRAM Development Group Memory Division Samsung Electronics Co. Hwasung-City Korea DRAM Development Group Memory Division Samsung Electronics Co. Hwasung-City Korea DRAM Development Group Memory Division Samsung Electronics Co. Hwasung-City Korea DRAM Development Group Memory Division Samsung Electronics Co. Hwasung-City Korea DRAM Core Technology Lab. R&D Center Samsung Electronics Co. Hwasung-City Korea DRAM Core Technology Lab. R&D Center Samsung Electronics Co. Hwasung-City Korea DRAM Development Group Memory Division Samsung Electronics Co. Hwasung-City Korea DRAM Development Group Memory Division Samsung Electronics Co. Hwasung-City Korea DRAM Development Group Memory Division Samsung Electronics Co. Hwasung-City Korea DRAM Development Group Memory Division Samsung Electronics Co. Hwasung-City Korea DRAM Development Group Memory Division Samsung Electronics Co. Hwasung-City Korea
A functional 4F2 DRAM was implemented based on the technology combination of stack capacitor and surrounding-gate vertical channel access transistor (VCAT). A high performance VCAT has been developed showing excellent... 详细信息
来源: IEEE期刊 IEEE期刊 评论
Companies develop nanotech RAM chips
Computer
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Computer 2004年 第8期37卷 28-页
作者: L.D. Paulson
Nantero has created NRAM - the "N" stands for both nanotechnology and nonvolatile - a high-density RAM chip that saves its contents when a device is turned off or loses external power. Nantero manufacture its chip wit... 详细信息
来源: IEEE期刊 IEEE期刊 评论
Year of transition in offing for DDR3
Electronic Engineering Times (01921541)
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Electronic Engineering Times (01921541) 2007年 第1474期 32-36页
作者: Young Choi youngc@semiconductor.com
The article provides information on the use of double-data-rate three (DDR3) dynamic Random access memory (DRAM) in replacement for the DDR2. DDR3 offers reduction on power consumption up to 30% which implies less hea... 详细信息
来源: EBSCOASC期刊 EBSCOASC期刊 EBSCOBSC期刊 EBSCOBSC期刊 评论
Acer cuts DRAM output
Solid State Technology
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Solid State Technology 第9期41卷 58页
作者: Lunday, Christine
Reports on the plan of Acer Semiconductor Manufacturing Incorporated (ASMI) to cut its dynamic Random-access memory (DRAM) output. Technology licensing agreement of ASMI with IBM; Terms of the agreement; Plans of the ... 详细信息
来源: EBSCOASC期刊 EBSCOASC期刊 评论
DRAM Industry to Grow 20% in 2003, Report Says
Electronic News
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Electronic News 2003年 第2期49卷
Predicts the growth of the dynamic Random access memory (DRAM) industry in 2003. Percentage growth of the industry; Predicted increase in DRAM shipments; Decline in the prices of DRAM.
来源: EBSCOASC期刊 EBSCOASC期刊 EBSCOBSC期刊 EBSCOBSC期刊 评论
Three-dimensional simulation of charge collection and multiple-bit upset in Si devices
IEEE transactions on nuclear science;IEEE Transactions on Nu...
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IEEE transactions on nuclear science;IEEE Transactions on Nuclear Science 1994年 第6期41卷 2005-2017页
作者: P.E. Dodd F.W. Sexton P.S. Winokur Sandia Nat. Labs. Albuquerque NM USA Sandia Nat. Labs. Albuquerque NM USA Sandia Nat. Labs. Albuquerque NM USA
In this paper, three-dimensional numerical simulation is used to explore the basic charge-collection mechanisms in silicon n/sup +//p diodes. For diodes on lightly-doped substrates (<1/spl times/10/sup 15/ cm/sup -3/)... 详细信息
来源: IEEE期刊 IEEE期刊 评论
Form Factor
Computerworld
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Computerworld 2004年 第31期38卷 24-24页
作者: Kay, Russell russkay@charter.net
The article defines the term form factor and offers a look at common form factors. Form factor refers to the overall dimensions and component layout of a device, its physical size and packaging. The term covers techni... 详细信息
来源: EBSCOASC期刊 EBSCOASC期刊 EBSCOBSC期刊 EBSCOBSC期刊 评论
More SGRAM support on the way
Electronic News
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Electronic News 第2064期41卷 16页
作者: Cataldo, Anthony
Reports that more graphics IC manufacturers are preparing devices which support synchronous graphics RAMs (SGRAMs) being developed by memory makers. Graphics controller makers' plan to introduce products that interfac... 详细信息
来源: EBSCOASC期刊 EBSCOASC期刊 评论