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检索条件"作者=Gasiot, G"
24 条 记 录,以下是1-10 订阅
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Analysis and modelinG of the charGe collection mechanism in 28-nm FD-SOI
IEEE transactions on nuclear science;IEEE Transactions on Nu...
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IEEE transactions on nuclear science;IEEE Transactions on Nuclear Science 2018年 第8期65卷 1894-1899页
作者: Correas, V. Nofal, I. Cerba, J. Monsieur, F. Gasiot, G. Alexandrescu, D. Roche, P. Gonella, R. iRoC TechnoloGies Grenoble France iRoC TechnoloGies Grenoble France iRoC TechnoloGies Grenoble France STMicroelectronics Crolles France STMicroelectronics Crolles France iRoC TechnoloGies Grenoble France STMicroelectronics Crolles France STMicroelectronics Crolles France
TCAD simulations on 28-nm fully depleted silicon on insulator structures are used to analyze the charGe collection mechanism leadinG to parasitic current when an ionizinG particle passes throuGh the devices. A descrip... 详细信息
来源: IEEE期刊 IEEE期刊 EBSCOASC期刊 EBSCOASC期刊 评论
CharGe SharinG Study in the Case of Neutron Induced SEU on 130 nm Bulk SRAM Modeled by 3-D Device Simulation
IEEE transactions on nuclear science;IEEE Transactions on Nu...
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IEEE transactions on nuclear science;IEEE Transactions on Nuclear Science 2006年 第4期53卷 1897-1901页
作者: Mérelle, T. merelle@cem2.univ-montp2.fr Serre, S. SaiGné, F. SaGnes, B. Gasiot, G. Roche, P. Carriëre, T. Palau, M.-C. STMicroelectronics Central R&D 38926 Crolles Cedex France CEM2 Université de Montpellier II 34095 Montpellier Cedex 5 France EADS-ST 78133 Les Mureaux Cedex France
The charGe sharinG quantification in the case of neutron induced SEUs in a 130 nm bulk SRAM is presented. Conclusions on its contribution to the soft errors sensitivity evaluation usinG Monte-Carlo codes are underline... 详细信息
来源: EBSCOASC期刊 EBSCOASC期刊 IEEE期刊 IEEE期刊 EBSCOBSC期刊 EBSCOBSC期刊 评论
Prediction of Multiple Cell Upset Induced by Heavy Ions in a 90 nm Bulk SRAM
IEEE transactions on nuclear science;IEEE Transactions on Nu...
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IEEE transactions on nuclear science;IEEE Transactions on Nuclear Science 2009年 第4期56卷 2050-2055页
作者: Correas, V. vincent.correas@ies.univ-montp2.fr SaiGne, F. SaGnes, B. Wrobel, F. Boch, J. Gasiot, G. Roche, P. STMicroelectronics TechnoloGy R&D TechnoloGy Line ManaGement STMicroelectronics 38926 Crolles France IES Université de Montpellier II 34095 Montpellier Cedex 5 France CNRS 34090 Montpellier France IES Université de Montpellier II Place Eugene Bataillon CC 083 34095 Montpellier Cedex 5 France
The PHISco simulation tool was known to be able to predict the SEU cross section for incident ions. This tool is improved in this work to also predict the MCU rate. Experimental and predicted results are shown to be i... 详细信息
来源: IEEE期刊 IEEE期刊 EBSCOBSC期刊 EBSCOBSC期刊 EBSCOASC期刊 EBSCOASC期刊 评论
Innovative Simulations of Heavy Ion Cross Sections in 130 nm CMOS SRAM
IEEE transactions on nuclear science;IEEE Transactions on Nu...
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IEEE transactions on nuclear science;IEEE Transactions on Nuclear Science 2007年 第6期54卷 2413-2418页
作者: Correas, Vincent Vincent.correas@ies.univ-montp2.fr SaiGné, F. SaGnes, B. Boch, J. Gasiot, G. Giot, D. Roche, P. Front-End Technol. & Manuf. STMicroelectronics Crolles Front-End Technol. & Manuf. STMicroelectronics Crolles Front-End Technol. & Manuf. STMicroelectronics Crolles Front-End Technol. & Manuf. STMicroelectronics Crolles
A simulation tool to predict the heavy ion cross section is proposed. A 20% averaGe error between experimental and simulated results is shown for a SRAM in a commercial 130 nm CMOS technoloGy. Input parameters are obt... 详细信息
来源: IEEE期刊 IEEE期刊 EBSCOBSC期刊 EBSCOBSC期刊 EBSCOASC期刊 EBSCOASC期刊 评论
Altitude and UnderGround Real-Time SER Characterization of CMOS 65 nm SRAM
IEEE transactions on nuclear science;IEEE Transactions on Nu...
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IEEE transactions on nuclear science;IEEE Transactions on Nuclear Science 2009年 第4期56卷 2258-2266页
作者: Autran, J. L. jean-luc.autran@univ-provence.fr Roche, P. philippe.roche@st.com Sauze, S. sebastien.sauze@12mp.fr Gasiot, G. Munteanu, D. daniela.munteanu@univ-provence.fr Loaiza, P. ploaiza@lsm.in2p3.fr Zampaolo, M. Borel, J. josephborel@aol.com Aix-Marseille University CNRS University Institute of France (IUF) and Institut Carnot STAR (IC-STAR Marseille) Institute of Materials Microelectronics and Nanosciences of Provence (IIvI2NP UMR CNRS 6242) Bâtiment IRPHE F- 13384 Marseille Cedex 13 France SIMicroelectronics F-38926 Crolles Cedex France Aix-Marseille University and CNRS Institute of Materials Microelectronics and Nanosciences of Provence (IM2NP UMR CNRS 6242) ASTEP Platform do Communauté des communes du Dévoluy F-05250 St Etienne en Dévoluy France Aix-Marseille University and CNRS Institute of Materials Microelectronics and Nanosciences of Provence (IM2NP UMR CNRS 6242) Bâtiment IRPHE F-l3384 Marseille Cedex 13 France Laboratoire Souterrain de Modane (LSM CEA-CNRS) F-73500 Modane France JB R&D Ferrière F-05250 Saint-Etienne en Dévoluy France
We report real-time SER characterization of CMOS 65 nm SRAM memories in both altitude and underGround environments. Neutron and alpha-particle SERS are compared with data obtained from accelerated tests and values pre... 详细信息
来源: IEEE期刊 IEEE期刊 EBSCOASC期刊 EBSCOASC期刊 EBSCOBSC期刊 EBSCOBSC期刊 评论
Alpha-Induced Multiple Cell Upsets in Standard and Radiation Hardened SRAMs Manufactured in a 65 nm CMOS TechnoloGy
IEEE transactions on nuclear science;IEEE Transactions on Nu...
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IEEE transactions on nuclear science;IEEE Transactions on Nuclear Science 2006年 第6期53卷 3479-3486页
作者: Gasiot, G. Gilles.Gasiot@st.com Giot, D. Roche, P. Front-End TechnoloGy and ManufacturinG Central CAD and Design Solutions STMicroelectronics 38926 Crolles France
Accelerated alpha-Soft Error Rate (SER) measurements are carried out on reGular and radiation-hardened SRAMs in a 65 nm CMOS technoloGy. Results are first compared to previous experimental radiation data in 130 nm and... 详细信息
来源: IEEE期刊 IEEE期刊 EBSCOBSC期刊 EBSCOBSC期刊 EBSCOASC期刊 EBSCOASC期刊 评论
Characterization of the Parasitic Bipolar Amplification in SOI TechnoloGies Submitted to Transient Irradiation
IEEE transactions on nuclear science;IEEE Transactions on Nu...
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IEEE transactions on nuclear science;IEEE Transactions on Nuclear Science 2002年 第3期49卷 1456页
作者: Ferlet-Cavrois, V. Marcandella, C. Giraud, G. Gasiot, G. Colladant, T. Musseau, O. Fenouillet, C. Du Port De Poncharra, J. CEA/DAM-Ile de France Bruyeres-le-Chatel France CEA/DAM-Ile de France Bruyeres-le-Chatel France CEA/DAM-Ile de France Bruyeres-le-Chatel France CEA/DAM-Ile de France Bruyeres-le-Chatel France CEA/DAM-Ile de France Bruyeres-le-Chatel France CEA/DAM-Ile de France Bruyeres-le-Chatel France
The parasitic bipolar amplification of silicon on insulator (SOI) devices is analyzed as a function of the technoloGy inteGration from 0.8 /spl mu/m down to 0.1 /spl mu/m. Experiments and simulations show that the bip... 详细信息
来源: EBSCOBSC期刊 EBSCOBSC期刊 IEEE期刊 IEEE期刊 评论
Alpha-Particle Induced Soft-Error Rate in CMOS 130 nm SRAM
IEEE transactions on nuclear science;IEEE Transactions on Nu...
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IEEE transactions on nuclear science;IEEE Transactions on Nuclear Science 2011年 第3期58卷 1086-1092页
作者: Martinie, S. Autran, J. L. Uznanski, S. Roche, P. Gasiot, G. Munteanu, D. Sauze, S. Aix-Marseille University and CNRS Institute of Materials Microelectronics and Nanosciences of Provence (IM2NP UMR CNRS 6242) Bâtiment IRPHE Marseille Cedex 13 France Aix-Marseille University and CNRS Institute of Materials Microelectronics and Nanosciences of Provence (IM2NP UMR CNRS 6242) Bâtiment IRPHE Marseille Cedex 13 France STMicroelectronics Crolles Cedex STMicroelectronics Crolles Cedex STMicroelectronics Crolles Cedex Aix-Marseille University and CNRS Institute of Materials Microelectronics and Nanosciences of Provence (IM2NP UMR CNRS 6242) Bâtiment IRPHE Marseille Cedex 13 France Aix-Marseille University and CNRS Institute of Materials Microelectronics and Nanosciences of Provence (IM2NP UMR CNRS 6242) Bâtiment IRPHE Marseille Cedex 13 France
We report the modelinG and simulation of the soft-error rate (SER) in CMOS 130 nm SRAM induced by alpha-particle emission in silicon due to uranium contamination at ppb concentration levels. Monte-Carlo simulation res... 详细信息
来源: EBSCOASC期刊 EBSCOASC期刊 IEEE期刊 IEEE期刊 EBSCOBSC期刊 EBSCOBSC期刊 评论
Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs
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Microelectronics and reliability 2017年 76卷 53-57页
作者: Moindjie, S. Autran, J.L. jean-luc.autran@univ-amu.fr Munteanu, D. Gasiot, G. Roche, P. Aix Marseille Univ Univ Toulon CNRS IM2NP (UMR 7334) Marseille France STMicroelectronics Crolles France Radiation Effects and Electrical Reliability (REER) Joint Laboratory AMU-CNRS-ISEN-STMicroelectronics France
Altitude and underGround real-time soft error rate (SER) measurements on SRAM circuits have been analyzed in terms of independent multi-Poisson processes describinG the occurrence of sinGle events as a function of bit... 详细信息
来源: EBSCOASC期刊 EBSCOASC期刊 评论
Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs
IEEE transactions on nuclear science;IEEE Transactions on Nu...
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IEEE transactions on nuclear science;IEEE Transactions on Nuclear Science 2005年 第5期52卷 1538-1544页
作者: Mérelle, Thomas merelle@cem2.univ-montp2.fr SaiGné, F. SaGnes, B. Gasiot, G. Roche, Ph. Carrière, T. Palau, M.-C. Wrobel, F. Palau, J.-M. STMicroelectronics Central R&D 38926 Crolles Cedex France. CEM2 Université de Montpellier II 34095 Montpellier Cedex 5 France. EADS-ST 78133 Les Mureaux Cedex France. LPES-CRESA Université de Nice—Sophia Antipolis 06i08 Nice Cedex 2 France.
This paper presents a new 3D methodoloGy to simulate Multiple Bit Upsets in commercial SRAMs. Experiments are performed at the Los, Alamos neutron facility on 90, 130, and 250 nm SRAMs and compared to Monte-Carlo simu... 详细信息
来源: IEEE期刊 IEEE期刊 EBSCOBSC期刊 EBSCOBSC期刊 评论